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RA30H4452M Datasheet, Mitsubishi Electric Semiconductor

RA30H4452M module equivalent, 30-watt rf mosfet amplifier module.

RA30H4452M Avg. rating / M : 1.0 rating-17

datasheet Download (Size : 63.19KB)

RA30H4452M Datasheet
RA30H4452M
Avg. rating / M : 1.0 rating-17

datasheet Download (Size : 63.19KB)

RA30H4452M Datasheet

Features and benefits


* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
* Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequency Range: 440-520MHz

Description

The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG.

Image gallery

RA30H4452M Page 1 RA30H4452M Page 2 RA30H4452M Page 3

TAGS

RA30H4452M
30-watt
MOSFET
Amplifier
Module
Mitsubishi Electric Semiconductor

Manufacturer


Mitsubishi Electric Semiconductor

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